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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 82N60P
VDSS ID25
RDS(on) trr
= =
600 V 82 A 75 m 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 TC = 25 C
Maximum Ratings 600 600 30 40 72 200 82 100 5 20 1040 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ V~ lb.in. g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, IISOL 1 mA, T = 1 min T=1s
300 2500 3000 1.5/13 30
Mounting torque, Terminal connection torque
Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125 C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 200 25 1000 75 V V nA A A m
* * * *
Advantages * Easy to mount * Space savings * High power density
(c) 2006 IXYS All rights reserved
DS99559E(01/06)
IXFN 82N60P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 50 80 23 VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 200 28 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External) 23 79 24 240 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 96 67 S nF pF pF ns ns ns ns nC nC nC 0.12 C/W 0.13 C/W SOT-227B Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS = 20 V; ID = IT, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/s VR = 100V
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 82 200 1.5 200 0.6 6.0 A A V ns C A
1. Pulse test, t 300 s, duty cycle d 2 % Test Current IT = 41A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFN 82N60P
Fig. 1. Output Characteristics @ 25C
90 80 70 V GS = 10V 8V 180 160 140 7V 120 100 80 60 6V 20 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 40 20 0 0 2 4 6 8 10 12 14 16 18 20 7V V GS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
50 40 30 6V
I D - Amperes
60
5V
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125C
90 80 70 V GS = 10V 7V 3.1 2.8 2.5
Fig. 4. R DS(on) Normalized to ID = 41A Value v s. Junction Temperature
V GS = 10V
I D - Amperes
60 6V 50 40 30 20 10 0 0 2 4 6 8 10 12 14 5V
R DS(on) - Normalized
2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 I D = 41A I D = 82A
V DS - Volts
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 41A Value vs. Drain Current
3 2.8 2.6 V GS = 10V TJ = 125C
70 60 80
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.4
I D - Amperes
TJ = 25C 0 20 40 60 80 100 120 140 160 180
2.2 2 1.8 1.6 1.4 1.2 1 0.8
50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
T J - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFN 82N60P
Fig. 7. Input Admittance
120 110 100 90 TJ = 125C 25C - 40C 160 140 120
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
80 70 60 50 40 30 20 10 0 3.5 4 4.5 5 5.5 6 6.5 7
100 80 60 40 20 0 0
TJ = - 40C 25C 125C
20
40
60
80
100
120
140
V GS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
250 225 200 175 10 9 8 7 V DS = 300V I D = 41A I G = 10mA
Fig. 10. Gate Charge
I S - Amperes
150 125 100 75 50 25 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 TJ = 125C TJ = 25C
V GS - Volts
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250
V SD - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
100,000 f = 1 MHz
1,000
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
RDS(on) Limit
I D - Amperes
10,000
C iss
25s 100s
100
C oss 1,000
1ms 10 DC 10ms
C rss 100 0 5 10 15 20 25 30 35 40
1 10
TJ = 150C TC = 25C 100 1000
V DS - Volts
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 82N60P
Fig. 13. Maximum Transient Thermal Resistance
1.000
R (th)JC - C / W
0.100
0.010
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
(c) 2006 IXYS All rights reserved

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